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NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
T amb = 25 ° C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V RWM
reverse standoff voltage
PESD5V0L2UU
PESD6V0L2UU
-
-
-
-
5.0
6.0
V
V
I RM
reverse leakage current
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
V RWM = 4.0 V
V RWM = 4.3 V
V RWM = 5.0 V
V RWM = 6.0 V
-
-
-
-
20
1.5
430
310
90
18
-
-
nA
nA
nA
nA
V BR
breakdown voltage
I R = 5 mA
C d
PESD5V0L2UU
PESD6V0L2UU
diode capacitance
f = 1 MHz; V R = 0 V
5.8
6.4
6.2
6.8
6.6
7.2
V
V
V CL
PESD5V0L2UU
PESD6V0L2UU
clamping voltage
PESD5V0L2UU
PESD6V0L2UU
I PP = 5.5 A
[1]
[2]
[1]
[2]
[3][4]
-
-
-
-
-
-
19
38
17
34
-
-
23
46
20
40
13
13.5
pF
pF
pF
pF
V
V
r dif
differential resistance
I R = 5 mA
PESD5V0L2UU
PESD6V0L2UU
-
-
-
-
25
30
?
?
PESD5V0L2UU_PESD6V0L2UU_1
[1]
[2]
[3]
[4]
Bidirectional con?guration: measured from pin 1 to 2 or pin 2 to 1.
Unidirectional con?guration: measured from pin 1 to 3 or pin 2 to 3.
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2009
5 of 13
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